A 0.16mm2 completely on-chip switched-capacitor DC-DC converter using digital capacitance modulation for LDO replacement in 45nm CMOS
Name
Ramadass-2010-A 0.16mm2 completely on-chip switched-capacitor.pdf
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7.14 MB
Format
Adobe PDF
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Author(s)
Ramadass, Yogesh Kumar
Fayed, Ayman A.
Haroun, Baher
Chandrakasan, Anantha P.
Date Issued
February 2010
Journal
IEEE International Solid-State Circuits Conference.. Digest of technical papers
Publisher
Institute of Electrical and Electronic Engineers
Citation
Ramadass, Y. et al. “A 0.16mm2 completely on-chip switched-capacitor DC-DC converter using digital capacitance modulation for LDO replacement in 45nm CMOS.” Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International. 2010. 208-209. © 2010, IEEE
Version
Final published version
Abstract
A completely on-chip switched-capacitor DC-DC converter that occupies 0.16 mm2 [mm superscript 2] is implemented in a 45 nm CMOS process. The converter delivers 8 mA output current while maintaining load voltages from 0.8 to 1 V from a 1.8 V input supply. A digital capacitive modulation scheme is employed to maintain the converter efficiency between 50 to 70% over a wide range of load current levels.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/ISSCC.2010.5433984
