Skip to main content
Log in
(current)
MIT Open Scholarship
DSpace@MIT
Search
Home
Research Laboratory for Electronics (RLE)
RLE Progress Reports
RLE Progress Report, No. 123 (1981)
Electronic Properties of Intrinsic Defects in Amorphous Silicon Dioxide
Electronic Properties of Intrinsic Defects in Amorphous Silicon Dioxide
Download
Name
RLE_PR_123_XVII.pdf
Size
108.36 KB
Format
Adobe PDF
Checksum
(MD5)
e2e0ed52a65bd6d6917d01d97d5b7b38
Author(s)
Kastner, Marc A.
Date Issued
January 1981
Publisher
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Series/Report no.
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 123
Description
Contains report on one research project.
Terms of Use
Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.
Persistent DSpace Link
http://hdl.handle.net/1721.1/56792
