Omnidirectional wavelength selective emitters/absorbers based on dielectric-filled anti-reflection coated two-dimensional metallic photonic crystals
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Kim_Omnidirectional.pdf
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Author(s)
Yeng, Yi Xiang
Chou, Jeffrey Brian
Rinnerbauer, Veronika
Shen, Yichen
Kim, Sang-Gook
Joannopoulos, John D.
Soljacic, Marin
Celanovic, Ivan
Date Issued
August 2014
Journal
Proceedings of SPIE--the International Society for Optical Engineering
Publisher
SPIE
Citation
Yeng, Yi Xiang, Jeffrey B. Chou, Veronika Rinnerbauer, Yichen Shen, Sang-Gook Kim, John D. Joannopoulos, Marin Soljacic, and Ivan Celanovic. “Omnidirectional Wavelength Selective Emitters/absorbers Based on Dielectric-Filled Anti-Reflection Coated Two-Dimensional Metallic Photonic Crystals.” Edited by Eva M. Campo, Elizabeth A. Dobisz, and Louay A. Eldada. Nanoengineering: Fabrication, Properties, Optics, and Devices XI (August 28, 2014). © 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
Version
Final published version
Abstract
We demonstrate designs of dielectric-filled anti-reflection coated (ARC) two-dimensional (2D) metallic photonic crystals (MPhCs) capable of omnidirectional, polarization insensitive, wavelength selective emission/absorption. Up to 26% improvement in hemispherically averaged emittance/absorptance below the cutoff wavelength is observed for optimized hafnium oxide filled 2D tantalum (Ta) PhCs over the unfilled 2D Ta PhCs. The optimized designs possess high hemispherically averaged emittance/absorptance of 0.86 at wavelengths below the cutoff wavelength and low hemispherically averaged emittance/absorptance of 0.12 at wavelengths above the cutoff wavelength, which is extremely promising for applications such as thermophotovoltaic energy conversion, solar absorption, and infrared spectroscopy.
MIT Department
Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies
Lincoln Laboratory
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Department of Physics
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1117/12.2067796
