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  4. X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth

X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth

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Author(s)
Wenzel, K.W.
•
Petrasso, R.D.
Date Issued
January 1, 1988
Publisher
MIT Plasma Science and Fusion Center
Persistent DSpace Link
http://hdl.handle.net/1721.1/94978
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