X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth

Wenzel, K.W.; Petrasso, R.D.

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X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth

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Author(s)

Wenzel, K.W.

•

Petrasso, R.D.

Date Issued

January 1, 1988

Publisher

MIT Plasma Science and Fusion Center

Persistent DSpace Link

http://hdl.handle.net/1721.1/94978