Ultrafast Photocurrent Measurement of the Escape Time of Electrons and Holes from Carbon Nanotube p-i-n Photodiodes
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Author(s)
Gabor, Nathaniel M.
Zhong, Zhaohui
Bosnick, Ken
McEuen, Paul L.
Date Issued
February 2012
Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Nathaniel M. Gabor et al. "Ultrafast Photocurrent Measurement of the Escape Time of Electrons and Holes from Carbon Nanotube p-i-n Photodiodes" Physical Review Letters 108, 087404 (2012). © 2012 American Physical Society
Version
Final published version
Abstract
Ultrafast photocurrent measurements are performed on individual carbon nanotube p-i-n photodiodes. The photocurrent response to subpicosecond pulses separated by a variable time delay Δt shows strong photocurrent suppression when two pulses overlap (Δt=0). The picosecond-scale decay time of photocurrent suppression scales inversely with the applied bias VSD, and is twice as long for photon energy above the second subband E[subscript 22] as compared to lower energy. The observed photocurrent behavior is well described by an escape time model that accounts for carrier effective mass.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1103/PhysRevLett.108.087404
