Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs
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Palacios_Advanced gate.pdf
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1.01 MB
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Author(s)
Chung, Jinwook
Kim, Tae-Woo
Palacios, Tomas
Date Issued
December 2010
Journal
Proceedings of the IEEE International Electron Devices Meeting (IEDM), 2010
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Chung, Jinwook W., Tae-Woo Kim, and Tomas Palacios. “Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs.” IEEE International Electron Devices Meeting (IEDM), 2010. 30.2.1–30.2.4. © Copyright 2010 IEEE
Version
Final published version
Abstract
In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electron mobility transistors (HEMTs) has been attributed to a significant drop of the intrinsic small-signal transconductance (g[subscript m]) with respect to the intrinsic DC g[subscript m]. To reduce this gm-collapse and improve high frequency performance, we have developed a new technology based on a combination of vertical gate-recess, oxygen plasma treatment, and lateral gate-etch which has allowed us to fabricate AlGaN/GaN HEMTs with a record current-gain cutoff frequency (f[subscript T]) of 225 GHz for a gate length (L[subscript g]) of 55 nm, and 162 GHz for an L[subscript g] of 110 nm.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/IEDM.2010.5703449
