Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
Name
s41467-019-08807-9.pdf
Description
Published version
Size
1.99 MB
Format
Adobe PDF
Checksum (MD5)
9c4501121eaa073d621006368938aaa6
Author(s)
Vukajlovic-Plestina, J
Kim, W
Ghisalberti, L
Varnavides, G
Tütüncuoglu, G
Potts, H
Friedl, M
Güniat, L
Carter, WC
Dubrovskii, VG
Date Issued
2019
Journal
Nature Communications
Publisher
Springer Science and Business Media LLC
Version
Final published version
Abstract
© 2019, The Author(s). III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is necessary. Here, we propose a mechanism which gives a clear route for maximizing the nanowire yield in the self-catalyzed growth fashion. It is widely accepted that growth of nanowires occurs on a layer-by-layer basis, starting at the triple-phase line. Contrary to common understanding, we find that vertical growth of nanowires starts at the oxide-substrate line interface, forming a ring-like structure several layers thick. This is granted by optimizing the diameter/height aspect ratio and cylindrical symmetry of holes, which impacts the diffusion flux of the group V element through the well-positioned group III droplet. This work provides clear grounds for realistic integration of III-Vs on silicon and for the organized growth of nanowires in other material systems.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution 4.0 International license
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1038/S41467-019-08807-9
