Simulation of iron impurity gettering in crystalline silicon solar cells
Name
815961206-MIT.pdf
Description
Full printable version
Size
9.59 MB
Format
Adobe PDF
Checksum (MD5)
40f1155ea4aed7b4e4873862727a69e8
Author(s)
Powell, Douglas M. (Douglas Michael)
Advisor(s)
Tonio Buonassisi.
Date Issued
2012
Publisher
Massachusetts Institute of Technology
Abstract
This work discusses the Impurity-to-Efficiency (12E) simulation tool and applet. The 12E simulator models the physics of iron impurity gettering in silicon solar cells during high temperature processing. The tool also includes a device simulator to calculate cell performance after processing. By linking input materials, processing, and cell performance, 12E enables accelerated solar cell optimization. Herein, background information on the economic drivers of solar cell installations and manufacturing are used to introduce the importance of iron impurity engineering. The fundamental physics of gettering and the development of the numerical methods employed by the tool are presented. The development, deployment, and use of the web applet are also discussed.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2012.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 52-56).
Subjects
Mechanical Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission.
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