Numerical method to optimize the polar-azimuthal orientation of infrared superconducting-nanowire single-photon detectors
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Author(s)
Csete, Maria
Sipos, Áron
Najafi, Faraz
Hu, Xiaolong
Berggren, Karl K.
Date Issued
October 2011
Journal
Applied Optics
Publisher
Optical Society of America
Citation
Csete, Maria et al. “Numerical Method to Optimize the Polar-azimuthal Orientation of Infrared Superconducting-nanowire Single-photon Detectors.” Applied Optics 50.31 (2011). © 2011 Optical Society of America
Version
Final published version
Abstract
A finite-element method for calculating the illumination-dependence of absorption in three-dimensional nanostructures is presented based on the radio frequency module of the Comsol Multiphysics software package (Comsol AB). This method is capable of numerically determining the optical response and near-field distribution of subwavelength periodic structures as a function of illumination orientations specified by polar angle, φ, and azimuthal angle, γ. The method was applied to determine the illumination-angle-dependent absorptance in cavity-based superconducting-nanowire single-photon detector (SNSPD) designs. Niobium-nitride stripes based on dimensions of conventional SNSPDs and integrated with ∼ quarter-wavelength hydrogen-silsesquioxane-filled nano-optical cavity and covered by a thin gold film acting as a reflector were illuminated from below by p-polarized light in this study. The numerical results were compared to results from complementary transfer-matrix-method calculations on composite layers made of analogous film-stacks. This comparison helped to uncover the optical phenomena contributing to the appearance of extrema in the optical response. This paper presents an approach to optimizing the absorptance of different sensing and detecting devices via simultaneous numerical optimization of the polar and azimuthal illumination angles.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1364/AO.50.005949
