Understanding tunneling magnetoresistance during thermal annealing in MgO-based junctions with CoFeB electrodes
Name
Wang-2010-Understanding tunnel.pdf
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Author(s)
Ni, C.
Wang, W. G.
Weiland, C.
Shah, L. R.
Fan, X.
Parson, P.
Miao, Guoxing
Jordan-Sweet, J.
Kou, X. M.
Zhang, Y. P.
Date Issued
April 2010
Journal
Physical Review B
Publisher
American Physical Society
Citation
Wang, W.G. et al. "Understanding tunneling magnetoresistance during thermal annealing in MgO-based junctions with CoFeB electrodes." Physical Review B 81.14 (2010): 144406. © 2010 The American Physical Society
Version
Final published version
Abstract
The competition between the interface crystallization and diffusion processes, their influence on the onset of symmetry-filtering coherent tunneling of Δ1 band electrons in the MgO-based magnetic tunnel junctions is investigated. Systematic study of the transport and magnetoresistance during thermal annealing of these junctions shows a unique behavior of the tunneling conductance in the parallel state. The optimal annealing time for achieving giant tunneling magnetoresistance at different temperatures is determined. The evolution of magnetoresistance consists of three distinct regions, responsible by different contributions from CoFeB electrodes and the MgO barrier. The whole phenomenon can be understood through an empirical model based on the Landauer tunneling picture.
MIT Department
Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.81.144406
