Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates
Name
Fitzgerald_Materials properties.pdf
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1.44 MB
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Adobe PDF
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89878512ce2f995c6e248f6fcc245f8a
Author(s)
Jandl, Adam Christopher
Bulsara, Mayank
Fitzgerald, Eugene A.
Date Issued
April 2014
Journal
Journal of Applied Physics
Publisher
American Institute of Physics
Citation
Jandl, Adam, Mayank T. Bulsara, and Eugene A. Fitzgerald. “Materials Properties and Dislocation Dynamics in InAsP Compositionally Graded Buffers on InP Substrates.” Journal of Applied Physics 115, no. 15 (April 21, 2014): 153503. © 2014 AIP Publishing LLC.
Version
Final published version
Abstract
The properties of InAs [subscript x]P1[subscript −x] compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (ε/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on threading dislocation density, surface roughness, epi-layer relaxation, and tilt. We find that gradual introduction of strain causes increased dislocation densities (>10[superscript 6]/cm[superscript 2]) and tilt of the epi-layer (>0.1°). A method of abrupt strain initiation is proposed which can result in dislocation densities as low as 1.01 × 10[superscript 5] cm[superscript −2] for films graded from the InP lattice constant to InAs [subscript 0.15]P[subscript 0.85]. A model for a two-energy level dislocation nucleation system is proposed based on our results.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.4871289
