Hole mobility and effective mass in SiGe heterostructure-based PMOS devices
Name
51979176-MIT.pdf
Description
Full printable version
Size
3.61 MB
Format
Adobe PDF
Checksum (MD5)
fac51d9fb8702be1fa7caf8647d24715
Author(s)
Tanasa, Corina E. (Corina Elena), 1976-
Advisor(s)
Dimitri A. Antoniadis.
Alternative Title
Silicon Germanium hole mobility and effective mass
Date Issued
2002
Publisher
Massachusetts Institute of Technology
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2002.
Includes bibliographical references (leaves 100-103).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
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