10-nm Fin-width InGaSb p-channel self-aligned FinFETs using antimonide-compatible digital etch
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IEDM2017_WLu_final.pdf
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2 MB
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Author(s)
Lu, Wenjie
Roh, I. P.
Geum, D.-M.
Kim, S.-H.
Song, J. D.
Kong, L.
del Alamo, Jesus A
Date Issued
January 2018
Journal
IEEE International Electron Devices Meeting (IEDM)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Lu, W. et al. "10-nm Fin-width InGaSb p-channel self-aligned FinFETs using antimonide-compatible digital etch." IEEE International Electron Devices Meeting (IEDM), December 2017, San Francisco, CA, USA, Institute of Electrical and Electronics Engineers (IEEE), January 2018 © 2017 IEEE
Version
Author's final manuscript
Abstract
We have fabricated self-aligned InGaSb p-channel FinFETs using a novel antimonide-compatible digital etch. This is the first demonstration of digital etch on InGaSb-based transistors of any kind. It has enabled the first fabricated InGaSb FinFETs featuring fin widths down to 10 nm and gate lengths of 20 nm. Single fin transistors with Wf = 10 nm and channel height of 23 nm (fin aspect ratio of 2.3) have achieved a record transconductance of 160 μS/μm at V ds = 0.5 V. When normalized to device footprint, it reaches a record high gm = 704 μS/μm. Digital etch has been shown to effectively improve the turn-off characteristics of the devices.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1109/iedm.2017.8268412
