Face-up chemical mechanical polishing : kinematics and material removal rate
Name
77549974-MIT.pdf
Description
Full printable version
Size
1.08 MB
Format
Adobe PDF
Checksum (MD5)
8bf4ddea8b00af6d6d8036c47b11e516
Author(s)
Shieh, Marvin Bryan
Advisor(s)
Jung-Hoon Chun and Nannaji Saka.
Alternative Title
Face-up CMP : kinematics and material removal rate
Date Issued
2006
Publisher
Massachusetts Institute of Technology
Abstract
A working prototype face-up CMP tool has successfully been completed. Experiments conducted on the face-up CMP machine qualitatively correspond with the theoretical polishing model. Discrepancies in data from the theoretical model could potentially be caused by non-uniform loading of the polishing pad and uneven distribution of slurry over the pad due to the edge effects on fluid flow. Despite the discrepancies, experimental data suggest that the theoretical model used to describe blanket wafer polishing by the face-up CMP tool is at least partially valid.
Description
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2006.
Includes bibliographical references (leaf 27).
Subjects
Mechanical Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Terms of Use
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