Realization of 2D crystalline metal nitrides via selective atomic substitution
Name
eaax8784.full.pdf
Description
Published version
Size
1.48 MB
Format
Adobe PDF
Checksum (MD5)
072dcdeef25b4f689fe9ac01dea05aad
Author(s)
Cao, Jun
Li, Tianshu
Gao, Hongze
Lin, Yuxuan
Wang, Xingzhi
Wang, Haozhe
Palacios, Tomás
Ling, Xi
Date Issued
January 2020
Journal
Science Advances
Publisher
American Association for the Advancement of Science (AAAS)
Citation
Cao, Jun et al. "Realization of 2D crystalline metal nitrides via selective atomic substitution." Science Advances 6, 2 (January 2020): eaax8784.
Version
Final published version
Abstract
Two-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are desirable for applications in electronic and optoelectronic devices; however, the synthesis of these TMNs has not yet been achieved. Here, we report the synthesis of few-nanometer thin Mo₅N₆ crystals with large area and high quality via in situ chemical conversion of layered MoS₂ crystals. The versatility of this general approach is demonstrated by expanding the method to synthesize W₅N₆ and TiN. Our strategy offers a new direction for preparing 2D TMNs with desirable characteristics, opening a door for studying fundamental physics and facilitating the development of next-generation electronics.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution NonCommercial License 4.0
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1126/SCIADV.AAX8784
