Computational polarized Raman microscopy on sub-surface nanostructures with sub-diffraction-limit resolution
Name
oe-29-23-38027.pdf
Description
Published version
Size
6.49 MB
Format
Adobe PDF
Checksum (MD5)
fd4c7e416e2e7dfffe19e1071f70029a
Author(s)
Li, Zheng
Persits, Nili
Gray, Dodd J
Ram, Rajeev J
Date Issued
2021
Journal
Optics Express
Publisher
The Optical Society
Citation
Li, Zheng, Persits, Nili, Gray, Dodd J and Ram, Rajeev J. 2021. "Computational polarized Raman microscopy on sub-surface nanostructures with sub-diffraction-limit resolution." Optics Express, 29 (23).
Version
Final published version
Abstract
Raman microscopy with resolution below the diffraction limit is demonstrated on sub-surface nanostructures. Unlike most other modalities for nanoscale measurements, our approach is able to image nanostructures buried several microns below the sample surface while still extracting details about the chemistry, strain, and temperature of the nanostructures. In this work, we demonstrate that combining polarized Raman microscopy adjusted to optimize edge enhancement effects and nanostructure contrast with fast computational deconvolution methods can improve the spatial resolution while preserving the flexibility of Raman microscopy. The cosine transform method demonstrated here enables significant computational speed-up from O(N3) to O(Nlog N) - resulting in computation times that are significantly below the image acquisition time. CMOS poly-Si nanostructures buried below 0.3 - 6 µm of complex dielectrics are used to quantify the performance of the instrument and the algorithm. The relative errors of the feature sizes, the relative chemical concentrations and the fill factors of the deconvoluted images are all approximately 10% compared with the ground truth. For the smallest poly-Si feature of 230 nm, the absolute error is approximately 25 nm.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1364/OE.443665
