Tuning Electrical, Optical, and Thermal Properties through Cation Disorder in Cu2ZnSnS4
Name
Ye et al. - 2019 - Tuning Electrical Optical and Thermal Properties.pdf
Description
Accepted version
Size
1.23 MB
Format
Adobe PDF
Checksum (MD5)
7b9943aa1577405bca4668fa7d5042c8
Author(s)
Ye, Kevin
Siah, Sin Cheng
Erslev, Peter T.
Akey, Austin J
Settens, Charles M
Hoque, Md Shafkat Bin
Braun, Jeffrey
Hopkins, Patrick
Teeter, Glenn
Buonassisi, Anthony
Date Issued
September 2019
Journal
Chemistry of Materials
Publisher
American Chemical Society (ACS)
Citation
Ye, Kevin et al. "Tuning Electrical, Optical, and Thermal Properties through Cation Disorder in Cu2ZnSnS4." Chemistry of Materials 31, 20 (September 2019): 8402–8412 © 2019 American Chemical Society
Version
Author's final manuscript
Abstract
Chemical disorder in semiconductors is important to characterize reliably because it affects materials performance, for instance by introducing potential fluctuations and recombination sites. It also represents a means to control material properties, to far exceed the limits of equilibrium thermodynamics. We present a study of highly disordered Cu-Zn-Sn-S (d-CZTS) films along the Cu2SnS3-Cu2ZnSnS4-ZnS binary line, deposited by physical vapor deposition. Deposition at low temperature kinetically stabilizes compositions that are well outside of the narrow, equilibrium solid solution of kesterite (Cu2ZnSnS4). Here we study d-CZTS and its thermal treatment using complementary characterization techniques: X-ray absorption spectroscopy (XAS), X-ray diffraction (XRD), and transmission electron microscopy (TEM). We find that cations in d-CZTS are highly disordered while the sulfur anions remain in a well-defined, cubic close-packed lattice. On the atomic scale, composition fluctuations are accommodated preferentially by stacking faults. Kinetically-stabilized cation disorder can produce nonequilibrium semiconductor alloys with a wide range of band gap, electronic conductivity, and thermal conductivity. d-CZTS therefore represents a processing route to optimizing materials for optoelectronic device elements such as light absorbers, window layers, and thermal barriers.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Mechanical Engineering
MIT Materials Research Laboratory
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1021/acs.chemmater.9b02287
