Optical endpoint detection for the chemical mechanical polishing process
Name
47652004-MIT.pdf
Description
Full printable version
Size
12.74 MB
Format
Adobe PDF
Checksum (MD5)
a56d37ff2c174ac6c03f221f125d00a8
Author(s)
Nam, Jamie (Jamie Hyun), 1975-
Advisor(s)
Ernesto Blanco.
Date Issued
2000
Publisher
Massachusetts Institute of Technology
Abstract
This thesis covers the design and implementation of a mechanism for detecting the endpoint for the Chemical Mechanical Polishing process of copper wafers. The proposed mechanism will detect the reflectance difference found in semiconductor materials to trigger the stop of the polishing process. This will prevent over polishing of the wafer while ensuring the optimal removal of excess materials. The mechanism is intended to run in-situ, while the polishing occurs. This is accomplished by embedding the reflectance sensor in the polishing platen to allow a clear view of the wafer surface. The reflectance from the surface of the wafer is a function of the material properties, surface structure, angle of incident light, and polarization of light. The experimental results revealed detectable change in the reflectance of the wafer surface, which may be used to determine the endpoint of polishing.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2000.
Includes bibliographical references (leaves 92-95).
Subjects
Mechanical Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Terms of Use
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Persistent DSpace Link
