Stabilizing far-from-equilibrium (Mo,Ti)S2 thin films by metal sulfurization at reduced temperature
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023405_1_6.0002227.pdf
Description
Published version
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3.63 MB
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Checksum (MD5)
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Author(s)
Li, Yifei
Reidy, Kate
Penn, Aubrey
Lee, Seng Huat
Wang, Baoming
Ye, Kevin
Mao, Zhiqiang
Ross, Frances M
Jaramillo, R
Date Issued
February 16, 2023
Journal
Journal of Vacuum Science & Technology A
Publisher
AIP Publishing
Citation
Yifei Li, Kate Reidy, Aubrey Penn, Seng Huat Lee, Baoming Wang, Kevin Ye, Zhiqiang Mao, Frances M. Ross, R. Jaramillo; Stabilizing far-from-equilibrium (Mo,Ti)S2 thin films by metal sulfurization at reduced temperature. J. Vac. Sci. Technol. A 1 March 2023; 41 (2): 023405.
Version
Final published version
Abstract
We report the synthesis of large-area, high-Ti-content, Mo1−xTixS2 alloy thin films in the 2H phase at temperature as low as 500 °C using a scalable two-step method of metal film deposition, followed by sulfurization in H2S. Film processing at higher temperature accelerates Ti segregation, film coarsening, and the formation of TiS2 in the 1T phase. Crystal growth at higher temperature results in the formation of multiple binary sulfide phases, in agreement with the equilibrium phase diagram. Making highly metastable, smooth, and uniform single-phase alloy films, therefore, hinges on developing low-temperature processing. Our results are relevant to the development of technologies based on designer transition metal dichalcogenide alloys, including in photonic integrated circuits and gas sensing.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
MIT.nano
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DOI of Published Version
https://doi.org/10.1116/6.0002227
