Sub-10-nm half-pitch electron-beam lithography by using poly(methyl methacrylate) as a negative resist
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Berggren-Sub-10-nm half-pitch.pdf
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603.45 KB
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Author(s)
Berggren, Karl K.
Duan, Huigao
Winston, Donald
Yang, Joel K. W.
Cord, Bryan M.
Manfrinato, Vitor Riseti
Date Issued
December 2010
Journal
Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
Publisher
American Vacuum Society (AVS)
Citation
Duan, Huigao et al. “Sub-10-nm Half-pitch Electron-beam Lithography by Using Poly(methyl Methacrylate) as a Negative Resist.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 28.6 (2010): C6C58. © 2010 American Vacuum Society
Version
Final published version
Abstract
Developing high-resolution resists and processes for electron-beam lithography is of great importance for high-density magnetic storage, integrated circuits, and nanoelectronic and nanophotonic devices. Until now, hydrogen silsesquioxane (HSQ) and calixarene were the only two reported negative resists that could approach sub-10-nm half-pitch resolution for electron-beam lithography. Here, the authors report that 10-nm half-pitch dense nanostructures can also be readily fabricated using the well known poly(methyl methacrylate) (PMMA) resist operating in negative tone, even at exposure energies as low as 2 keV. In addition to scanning electron microscopy metrology, transmission electron microscopy metrology was done to confirm the high-resolution capability of negative-tone PMMA. This process was compared to HSQ with salty development and showed similar ultimate resolution, so it could be used as an alternative for applications incompatible with HSQ.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1116/1.3501353
