Measurement of Channel Temperature in GaN High-Electron Mobility Transistors
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Joh-2009-Measurement of Chann.pdf
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Author(s)
Joh, Jungwoo
del Alamo, Jesus A.
Jimenez, Jose L.
Tserng, Hua-Quen
Chou, Tso-Min
Chowdhury, Uttiya
Date Issued
November 2009
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers
Citation
Jungwoo Joh et al. “Measurement of Channel Temperature in GaN High-Electron Mobility Transistors.” Electron Devices, IEEE Transactions on 56.12 (2009): 2895-2901. © 2009 IEEE
Version
Final published version
Abstract
In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (I [subscript Dmax] and R [subscript ON]) with a synchronized pulsed I -V setup. As our technique involves only electrical measurement, no special design in device geometry is required, and packaged devices can be measured. We apply this technique to different device structures and validate its sensitivity and robustness.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
http://dx.doi.org/10.1109/TED.2009.2032614
