Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes
Name
Villalpando-Paez-2009-Raman spectroscopy s.pdf
Size
1.17 MB
Format
Adobe PDF
Checksum (MD5)
47be7019ac96a2089a6896365235bd31
Author(s) • • • • • • • • •
Villalpando Paez, Federico
Son, H.
Chou, S. G.
Samsonidze, Ge. G.
Kim, Y. A.
Muramatsu, Hiroyuki
Hayashi, T.
Endo, M.
Terrones, M.
Dresselhaus, Mildred
Date Issued
July 2009
Journal
Physical Review B
Publisher
American Physical Society
Citation
Villalpando-Paez, F. et al. “Raman spectroscopy study of heat-treated and boron-doped double wall carbon nanotubes.” Physical Review B 80.3 (2009): 035419. (C) 2010 The American Physical Society.
Version
Final published version
Abstract
We performed Raman spectroscopy experiments on undoped and boron-doped double walled carbon nanotubes (DWNTs) that exhibit the “coalescence inducing mode” as these DWNTs are heat treated to temperatures between 1200 °C and 2000 °C. The fact that boron doping promotes DWNT coalescence at lower temperatures allowed us to study in greater detail the behavior of first- and second-order Raman modes as a function of temperature with regard to the coalescence process. Furthermore, by using various excitation laser energies we probed DWNTs with different metallic (M) and semiconducting (S) inner and outer tubes. We find that regardless of their M and S configurations, the smaller diameter nanotubes disappear at a faster rate than their larger diameter counterparts as the heat treatment temperature is increased. We also observe that the frequency of the G band is mostly determined by the diameter of the semiconducting layer of those DWNTs that are in resonance with the laser excitation energy. Finally, we explain the contributions to the G′ band from the inner and outer layers of a DWNT.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Physics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
http://dx.doi.org/10.1103/PhysRevB.80.035419