Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs
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Author(s)
Chleirigh, C. Ni
Gomez, Leonardo
Hashemi, Pouya
Hoyt, Judy L.
Date Issued
June 2010
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Gomez, Leonardo et al. “Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs.” IEEE Electron Device Letters 31.8 (2010): 782-784. Web. 3 Feb. 2012. © 2010 Institute of Electrical and Electronics Engineers
Version
Final published version
Abstract
The hole mobility characteristics of 〈110〉 /(100)-oriented asymmetrically strained-SiGe p-MOSFETs are studied.
Uniaxial mechanical strain is applied to biaxial compressive
strained devices and the relative change in effective hole mobility
is measured. The channel Ge content varies from 0 to 100%. Up
to −2.6% biaxial compressive strain is present in the channel
and an additive uniaxial strain component of −0.06% is applied
via mechanical bending. The hole mobility in biaxial compressive
strained-SiGe is enhanced relative to relaxed Si. It is observed that
this mobility enhancement increases further with the application
of 〈110〉 longitudinal uniaxial compressive strain. The relative
change in mobility with applied stress is larger for biaxial compressive
strained-SiGe than for Si and increases with the amount
of biaxial compressive strain present in the channel.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
https://doi.org/10.1109/led.2010.2050574
