SiGeC Near Infrared Photodetectors
Name
AMMNS020.pdf
Size
473.55 KB
Format
Adobe PDF
Checksum (MD5)
35ba051da0a79bcb0be8858fd71803fc
Author(s)
Li, Baojun
Chua, Soo-Jin
Fitzgerald, Eugene A.
Leitz, Christopher W.
Miao, Lingyun
Date Issued
January 2002
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
A near infrared waveguide photodetector in Si-based ternary Si₁−x−yGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption layer compositions of Si₀.₇₉Ge₀.₂C₀.₀₁ and Si₀.₇₀Ge₀.₂₈C₀.₀₂ were designed. The active absorption layer has a thickness of 120~450 nm. The external quantum efficiency can reach ~3% with a cut-off wavelength of around 1.2 µm.
Subjects
photodetector
quantum efficiency
absorption coefficient
absorption efficiency
band gap
lattice constant
critical thickness
SiGeC
semiconductor
alloy
Persistent DSpace Link
