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  5. SiGe virtual substrate engineering for integration of III-V materials, microelectromechanical systems, and strained silicon MOSFETs with silicon

SiGe virtual substrate engineering for integration of III-V materials, microelectromechanical systems, and strained silicon MOSFETs with silicon

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Author(s)
Currie, Matthew Thomas, 1973-
Advisor(s)
Eugene A. Fitzgerald.
Date Issued
2001
Publisher
Massachusetts Institute of Technology
Description
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001.
Includes bibliographical references (p. 184-191).
Subjects
Materials Science and Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Persistent DSpace Link
http://hdl.handle.net/1721.1/8784
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