Materials and processing issues in vertical GaN power electronics
Name
MSSP_online_JieHu.pdf
Description
Accepted version
Size
1.05 MB
Format
Adobe PDF
Checksum (MD5)
5efa1b70ff107b38b3acad71e1f5a861
Author(s)
Hu, Jie
Zhang, Yuhao
Sun, Min
Piedra, Daniel
Chowdhury, Nadim
Palacios, Tomas
Date Issued
May 2018
Journal
Materials Science in Semiconductor Processing
Publisher
Elsevier BV
Citation
Hu, Jie, Yuhao Zhang, Min Sun, Daniel Piedra, Nadim Chowdhury and Tomás Palacios. "Materials and processing issues in vertical GaN power electronics." Materials Science in Semiconductor Processing 78 (2017).
Version
Author's final manuscript
Abstract
Silicon-based power devices are reaching their fundamental performance limit. The use of wide-bandgap semiconductors with superior material properties over silicon offers the potential for power electronic systems with much higher power densities and higher conversion efficiency. GaN, with a high critical electric field and carrier mobility, is considered one of the most promising candidates for future high-power, high frequency and high temperature applications. High voltage transistors and diodes based on both lateral and vertical structures are of great interest for future power electronics. Particularly, vertical GaN power devices have recently attracted increasing attention due to their many unique properties. This paper reviews recent progress and key remaining challenges towards the development of high-performance vertical GaN transistors and diodes with emphasis on the materials and processing issues related to each device architecture.
Subjects
Mechanical Engineering
General Materials Science
Mechanics of Materials
Condensed Matter Physics
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Creative Commons Attribution-NonCommercial-NoDerivs License
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1016/j.mssp.2017.09.033
