Tungsten-Gated GaN/AlGaN p -FET With I max > 120 mA/mm on GaN-on-Si
Name
Sc_pFET_final.pdf
Description
Accepted version
Size
6.28 MB
Format
Adobe PDF
Checksum (MD5)
1019f99c575b9fe8a41a44e034cbde80
Author(s)
Chowdhury, Nadim
Xie, Qingyun
Palacios, Tomas
Date Issued
2022
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Chowdhury, Nadim, Xie, Qingyun and Palacios, Tomas. 2022. "Tungsten-Gated GaN/AlGaN p -FET With I max > 120 mA/mm on GaN-on-Si." IEEE Electron Device Letters, 43 (4).
Version
Author's final manuscript
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/LED.2022.3149659
