Fabrication Strategies for 2D Halide Perovskite Towards Next-Generation Optoelectronic Applications
Name
40684_2024_Article_663.pdf
Size
3.79 MB
Format
Adobe PDF
Checksum (MD5)
aaf2ebb4bf07dcab9d031649960b4a35
Author(s)
Cho, Seong H.
Jung, Yonghoon
Jang, Yeoun-Woo
Kim, Hyemin
Kim, Jaehyeon
Lim, Changhyun
Park, Ki-Tae
Kim, Seongheon
Chu, Young H.
Kim, Taehoon
Date Issued
October 8, 2024
Journal
International Journal of Precision Engineering and Manufacturing-Green Technology
Publisher
Korean Society for Precision Engineering
Citation
Cho, S.H., Jung, Y., Jang, YW. et al. Fabrication Strategies for 2D Halide Perovskite Towards Next-Generation Optoelectronic Applications. Int. J. of Precis. Eng. and Manuf.-Green Tech. (2024).
Version
Final published version
Abstract
Halide perovskites have emerged as promising materials in high-performance optoelectronics due to their exceptional optoelectrical properties, such as long carrier lifetime and tunable bandgap. Despite the promising capabilities of three-dimensional (3D) halide perovskites in applications like solar cells and light-emitting diodes, their operational stability remains a critical challenge. This review focuses on quasi-two-dimensional (2D) halide perovskites, which offer enhanced stability through their reduced dimensionality. We discuss the unique properties of these materials, including the ability to modify optical and electronic characteristics by altering the organic cations and the layer number in the perovskite structure. Additionally, we review various fabrication techniques, highlighting the shift from traditional low-temperature solution processes to more advanced solid, liquid, and vapor-phase methods, which address the limitations of conventional fabrication and enhance material quality. This comprehensive review aims to provide insights into the development of stable and efficient 2D halide perovskite-based optoelectronic devices, paving the way for their integration into next-generation optoelectronic applications.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
Terms of Use
Creative Commons Attribution
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1007/s40684-024-00663-3
