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  4. Structural and dynamical properties of Bridgman-grown CdSe[subscript x]Te[subscript 1−x] (0<x≤0.35) ternary alloys

Structural and dynamical properties of Bridgman-grown CdSe[subscript x]Te[subscript 1−x] (0<x≤0.35) ternary alloys

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Author(s)
Talwar, Devki N.
•
Feng, Zhe Chuan
•
Lee, Jyh-Fu
•
Becla, Piotr
Date Issued
April 2013
Journal
Physical Review B
Publisher
American Physical Society
Citation
Talwar, Devki N., Zhe Chuan Feng, Jyh-Fu Lee, and P. Becla. “Structural and Dynamical Properties of Bridgman-Grown CdSe[subscript x]Te[subscript 1−x] (0
Version
Final published version
Abstract
Measurements of the Raman scattering and extended x-ray-absorption fine-structure (EXAFS) spectroscopy are reported on a series of Bridgman-grown zinc-blende CdTe[subscript 1−x]Se[subscript x] (0.35 ≥ x > 0.05) ternary alloys to empathize their lattice dynamical and structural properties. Low-temperature Raman spectra have revealed the classic CdTe-like (TO[subscript 1], LO[subscript 1]) and CdSe-like (TO[subscript 2], LO[subscript 2]) pairs of optical phonons. The composition-dependent peak positions of the LO[subscript 2] modes exhibited shifts towards the higher-energy side, while those of the LO[subscript 1] phonon frequencies have unveiled the slight redshifts. Detailed analyses of EXAFS data by using the first-principles bond orbital model have enabled us to estimate both the lattice relaxations and nearest-neighbor radial force constants around the Se/Te atoms in the CdTe/CdSe matrix. These results are methodically integrated in the “average t-matrix” formalism within the Green's-function theory for defining the impurity perturbations to comprehend the composition-dependent optical phonons in CdTe[subscript 1−x]Se[subscript x] alloys. Based on our comprehensive calculations of impurity modes in the low-composition regime x → 0, we have assigned the weak phonon feature observed near ∼175 cm[superscript −1] in the low-temperature infrared reflectivity spectroscopy study to a Se[subscript Te] localized vibrational mode.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
http://hdl.handle.net/1721.1/88790
DOI of Published Version
https://doi.org/10.1103/PhysRevB.87.165208
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