L[subscript g] = 60 nm recessed In[subscript 0.7]Ga[subscript 0.3]As metal-oxide-semiconductor field-effect transistors with Al[subscript 2]O[subscript 3] insulator
Name
Antoniadis_L-g
Size
876.69 KB
Format
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Checksum (MD5)
7d940c8e9bce1eed2380c32fb058a44d
Author(s)
Kim, D.-H.
Li, J.
Kuo, J.-M.
Pinsukanjana, P.
Kao, Y.-C.
Chen, P.
Papavasiliou, A.
King, C.
Regan, E.
Urteaga, M.
Date Issued
November 2012
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Kim, D.-H., J. A. del Alamo, D. A. Antoniadis, J. Li, J.-M. Kuo, P. Pinsukanjana, Y.-C. Kao, et al. “Lg = 60 Nm Recessed In0.7Ga0.3As Metal-Oxide-Semiconductor Field-Effect Transistors with Al2O3 Insulator.” Appl. Phys. Lett. 101, no. 22 (2012): 223507. © 2012 American Institute of Physics
Version
Final published version
Abstract
In this Letter, we report on sub-100 nm recessed In[subscript 0.7]Ga[subscript 0.3]As metal-oxide-semiconductorfield-effect transistors(MOSFETs) with outstanding logic and high-frequency performance. The device features ex-situ atomic-layer-deposition (ALD) 2-nm Al[subscript 2]O[subscript 3] layer on a molecular-beam-epitaxy (MBE) 1-nm InP layer and is fabricated through a triple-recess process. An L[subscript g] = 60 nm MOSFET exhibits on-resistance (R[subscript ON]) = 220 Ω-μm, subthreshold-swing (S) = 110 mV/decade, and drain-induced-barrier-lowering (DIBL) = 200 mV/V at V[subscript DS] = 0.5 V, together with enhancement-mode operation. More importantly, this device displays record maximum transconductance (g[subscript m_max]) = 2000 μs/μm and current-gain cutoff frequency (f[subscript T]) = 370 GHz at V[subscript DS] = 0.5 V, in any III-VMOSFET technology.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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DOI of Published Version
https://doi.org/10.1063/1.4769230
