Enhancement of hopping conductivity by spontaneous fractal ordering of low-energy sites
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PhysRevB.94.085146.pdf
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923.19 KB
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Author(s)
Chen, Tianran
Skinner, Brian J
Date Issued
August 2016
Journal
Physical Review B
Publisher
American Physical Society
Citation
Chen, Tianran, and Brian Skinner. “Enhancement of Hopping Conductivity by Spontaneous Fractal Ordering of Low-Energy Sites.” Physical Review B 94.8 (2016): n. pag. © 2016 American Physical Society
Version
Final published version
Abstract
Variable-range hopping conductivity has long been understood in terms of a canonical prescription for relating the single-particle density of states to the temperature-dependent conductivity. Here we demonstrate that this prescription breaks down in situations where a large and long-ranged random potential develops. In particular, we examine a canonical model of a completely compensated semiconductor, and we show that at low temperatures hopping proceeds along self-organized, low-dimensional subspaces having fractal dimension d = 2. We derive and study numerically the spatial structure of these subspaces, as well as the conductivity and density of states that result from them. One of our prominent findings is that fractal ordering of low energy sites greatly enhances the hopping conductivity and allows Efros-Shklovskii type conductivity to persist up to unexpectedly high temperatures.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.94.085146
