Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors
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Palacios_Schottky-drain technology.pdf
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411.82 KB
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Checksum (MD5)
8180cc2157cf72bf387e1f7f70b9b62a
Author(s)
Lu, Bin
Palacios, Tomas
Piner, Edwin L.
Date Issued
February 2010
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Bin Lu, E.L. Piner, and T. Palacios. “Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors.” IEEE Electron Device Letters 31.4 (2010): 302–304. © Copyright 2010 IEEE
Version
Final published version
Abstract
In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-μm-thick GaN buffer showed a three-terminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed a maximum breakdown voltage below 600 V. The improvement of the breakdown voltage has been associated with the planar contact morphology and lack of metal spikes in the Schottky-drain metallization.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/led.2010.2040704
