Neon Ion Beam Lithography (NIBL)
Name
Berggren-Neon Ion Beam.pdf
Size
1.63 MB
Format
Adobe PDF
Checksum (MD5)
2984ae384eba2d28c2aff1ea24e571af
Author(s)
Winston, Donald
Manfrinato, Vitor Riseti
Nicaise, Samuel M.
Cheong, Lin Lee
Duan, Huigao
Ferranti, David
Marshman, Jeff
McVey, Shawn
Stern, Lewis
Notte, John
Date Issued
September 2011
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Winston, Donald et al. “Neon Ion Beam Lithography (NIBL).” Nano Letters 11.10 (2011): 4343–4347.
Version
Author's final manuscript
Abstract
Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm[superscript 2], 1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1021/nl202447n
