Modeling of electron transport in sub-100 nm channel length silicon MOSFETs
Name
33227898-MIT.pdf
Description
Full printable version
Size
10.75 MB
Format
Adobe PDF
Checksum (MD5)
d6c6fd856afb59a0c20a9dca7faf3a89
Author(s)
Jacobs, Jarvis Benjamin
Advisor(s)
Dimitri Antoniadis
Date Issued
1995
Publisher
Massachusetts Institute of Technology
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
Includes bibliographical references (p. 216).
Subjects
Electrical Engineering and Computer Science
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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