Negative compressibility in graphene-terminated black phosphorus heterostructures
Name
PhysRevB.93.035455.pdf
Size
1.32 MB
Format
Adobe PDF
Checksum (MD5)
e194e1ca805c9eaf2b9244b67d2b73c4
Author(s)
Wu, Yingying
Chen, Xiaolong
Wu, Zefei
Xu, Shuigang
Han, Tianyi
Lin, Jiangxiazi
Skinner, Brian J
Cai, Yuan
He, Yuheng
Cheng, Chun
Date Issued
January 2016
Journal
Physical Review B
Publisher
American Physical Society
Citation
Wu, Yingying, Xiaolong Chen, Zefei Wu, Shuigang Xu, et al. "Negative compressibility in graphene-terminated black phosphorus heterostructures." Phys. Rev. B 93, 035455 (January 2016). © 2016 American Physical Society
Version
Final published version
Abstract
Negative compressibility is a many-body effect wherein strong correlations give rise to an enhanced gate capacitance in two-dimensional (2D) electronic systems. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The encapsulation of BP by hexagonal boron nitride sheets with few-layer graphene as a terminal ensures ultraclean heterostructure interfaces, allowing us to observe negative compressibility at low hole carrier concentrations. We explain the negative compressibility based on the Coulomb correlation among in-plane charges and their image charges in a gate electrode in the framework of Debye screening.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.93.035455
