Functional renormalization group and variational Monte Carlo studies of the electronic instabilities in graphene near 1/4 doping
Name
Wang-2012-Functional renormalization group and.pdf
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Author(s)
Wang, Wan-Sheng
Xiang, Yuan-Yuan
Wang, Qiang-Hua
Wang, Fa
Yang, Fan
Lee, Dung-Hai
Date Issued
January 2012
Journal
Physical Review B
Publisher
American Physical Society
Citation
Wang, Wan-Sheng et al. “Functional Renormalization Group and Variational Monte Carlo Studies of the Electronic Instabilities in Graphene Near 1/4 Doping.” Physical Review B 85.3 (2012): 035414-1-035414-6. ©2012 American Physical Society.
Version
Final published version
Abstract
We study the electronic instabilities of near 1/4 electron doped graphene using the singular-mode functional renormalization group, with a self-adaptive k mesh to improve the treatment of the van Hove singularities, and variational Monte Carlo method. At 1/4 doping the system is a chiral spin-density wave state exhibiting the anomalous quantized Hall effect. When the doping deviates from 1/4, the dx[superscript 2]−y[superscript 2]+id[subscript xy] Cooper pairing becomes the leading instability. Our results suggest that near 1/4 electron or hole doping (away from the neutral point) the graphene is either a Chern insulator or a topoligical superconductor.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.85.035414
