Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS[subscript 2]
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Author(s)
Baugher, Britton W. H.
Yang, Yafang
Jarillo-Herrero, Pablo
Churchill, Hugh Olen Hill
Date Issued
August 2013
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Baugher, Britton W. H., Hugh O. H. Churchill, Yafang Yang, and Pablo Jarillo-Herrero. “ Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS[subscript 2].” Nano Lett. 13, no. 9 (September 11, 2013): 4212–4216.
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Author's final manuscript
Abstract
We report electronic transport measurements of devices based on monolayers and bilayers of the transition-metal dichalcogenide MoS[subscript 2]. Through a combination of in situ vacuum annealing and electrostatic gating we obtained ohmic contact to the MoS[subscript 2] down to 4 K at high carrier densities. At lower carrier densities, low-temperature four probe transport measurements show a metal–insulator transition in both monolayer and bilayer samples. In the metallic regime, the high-temperature behavior of the mobility showed strong temperature dependence consistent with phonon-dominated transport. At low temperature, intrinsic field-effect mobilities approaching 1000 cm[superscript 2]/(V·s) were observed for both monolayer and bilayer devices. Mobilities extracted from Hall effect measurements were several times lower and showed a strong dependence on density, likely caused by screening of charged impurity scattering at higher densities.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1021/nl401916s
