Sub-50 cm/s surface recombination velocity in InGaAsP/InP ridges
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191102_1_5.0062824.pdf
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Author(s)
Andrade, Nicolas M
Hooten, Sean
Kim, Yunjo
Kim, Jeehwan
Yablonovitch, Eli
Wu, Ming C
Date Issued
November 8, 2021
Journal
Applied Physics Letters
Publisher
AIP Publishing
Citation
Nicolas M. Andrade, Sean Hooten, Yunjo Kim, Jeehwan Kim, Eli Yablonovitch, Ming C. Wu; Sub-50 cm/s surface recombination velocity in InGaAsP/InP ridges. Appl. Phys. Lett. 8 November 2021; 119 (19): 191102.
Version
Final published version
Abstract
The III–V InP/InGaAsP/InGaAs material family is important for photonic devices due to its optical emission and absorption in the 1.55 and
1.3 lm telecommunication bands for optical interconnects. However, InGaAsP/InGaAs generally suffer from relatively high surface
recombination velocity—compared to Si [Das et al., in 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (IEEE, Calgary, AB, 2020),
pp. 1167–1170] and InP [Joyce et al., Nano Lett. 12, 5325–5330 (2012)], which reduces the efficiency and can increase the noise in
nanophotonic devices. Here, we demonstrate an efficient method to passivate the surface using a combination of sulfur-saturated ammonium
sulfide and atomic layer deposition. After annealing, the surface passivation led to a surface recombination velocity as low as 45 cm/s, corresponding to a >180 increase in the photoluminesence of a nanoscale light-emitting device with 200 nm width.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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DOI of Published Version
10.1063/5.0062824
