Characterization and modeling of polysilicon MEMS chemical-mechanical polishing
Name
57189433-MIT.pdf
Description
Full printable version
Size
12.24 MB
Format
Adobe PDF
Checksum (MD5)
9823b0089e41ce0dac7fee8ba02fe7b3
Author(s)
Tang, Brian D. (Brian David), 1980-
Advisor(s)
Duane S. Boning.
Date Issued
2004
Publisher
Massachusetts Institute of Technology
Abstract
Heavily used in the manufacture of integrated circuits, chemical-mechanical polishing (CMP) is becoming an enabling technology for microelectromechanical systems (MEMS). To reliably use CMP in the manufacturing process, designers must be able to accurately predict the CMP process and control final surface uniformity. This thesis extends integrated circuit CMP knowledge towards MEMS applications. Experiments were performed to characterize polysilicon MEMS CMP. A new test mask was created which contains test structures relevant to MEMS. Both single and dual material polish experiments were carried out and the resulting data fit against an adapted step height density model. Results show that integrated circuit CMP models are applicable to MEMS CMP, but the models need to be adjusted in order to contend with issues inherent to MEMS CMP. Further study may be necessary to accurately and completely characterize polysilicon MEMS CMP and make improvements to the models.
Description
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.
Includes bibliographical references (p. 74-75).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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