Case Study: A State-of-the-Art Cryogenic Low-Noise Amplifier as Used in the Deep Space Network
Name
FInal_MIT_paper525.pdf
Size
2.13 MB
Format
Adobe PDF
Checksum (MD5)
66bca67b76739c2daac6fabc34984c33
Author(s)
Ulrich L. Rohde
Tomás Palacios
Trusha Kared
Matthias Rudolph
Ignaz Eisele
Philip J. Erickson
Date Issued
2026
Abstract
This paper presents a comprehensive study of cryogenic low-noise amplifiers (LNAs) based on GaN and GaAs technologies for applications in NASA's Deep Space Network (DSN). The work emphasizes the importance of accurate noise modeling, parameter extraction, and simulation techniques for achieving ultra-low noise performance at microwave and millimeter-wave frequencies. Various noise models, including the Pucel, Pospieszalski, Materka-Kacprzak, and Fukui approaches, are reviewed and compared with respect to their applicability in modern GaN HEMT devices. The study highlights the challenges associated with high-frequency noise parameter measurements and demonstrates the use of advanced CAD tools to predict amplifier behavior from S-parameter data. Special attention is given to temperature-dependent noise analysis, which shows that cryogenic operation significantly reduces the noise figure and improves system sensitivity. Simulation results of wideband amplifiers using both lumped and distributed elements reveal trade-offs between gain, bandwidth, and noise performance. The findings confirm that while GaN devices offer superior power handling and robustness, precise modeling and cryogenic cooling are essential to achieve optimal low-noise characteristics required for deep-space communication and radio astronomy systems.
Subjects
Cryogenic Amplifiers
GaN HEMT
Noise Modeling
Deep Space Network
Low-Noise Amplifier
Persistent DSpace Link
