Integrated rare-Earth doped mode-locked lasers on a CMOS platform
Name
106860F.pdf
Description
Published version
Size
1.29 MB
Format
Adobe PDF
Checksum (MD5)
8066669c467ada80e1b69a76e695cda9
Author(s)
Kärtner, Franz X.
Callahan, Patrick T.
Shtyrkova, Katia
Li, Nanxi
Singh, Neetesh Kumar
Xin, Ming
Ravi, Koustuban
Notaros, Jelena
Magden, Emir Salih
Vermeulen, Diedrik Rene Georgette
Date Issued
May 2018
Journal
Silicon Photonics: From Fundamental Research to Manufacturing
Publisher
Society of Photo-Optical Instrumentation Engineers (SPIE)
Citation
Kärtner, Franz X. et al. "Integrated rare-Earth doped mode-locked lasers on a CMOS platform." Silicon Photonics: From Fundamental Research to Manufacturing, April 2018, Strasbourg, France, Society of Photo-Optical Instrumentation Engineers, May 2018. © 2018 SPIE
Version
Final published version
Abstract
Mode-locked lasers provide extremely low jitter optical pulse trains for a number of applications ranging from sampling of RF-signals and optical frequency combs to microwave and optical signal synthesis. Integrated versions have the advantage of high reliability, low cost and compact. Here, we describe a fully integrated mode-locked laser architecture on a CMOS platform that utilizes rare-earth doped gain media, double-chirped waveguide gratings for dispersion compensation and nonlinear Michelson Interferometers for generating an artificial saturable absorber to implement additive pulse mode locking on chip. First results of devices at 1.9 μm using thulium doped aluminum-oxide glass and operating in the Q-switched mode locking regime are presented.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
Lincoln Laboratory
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1117/12.2318010
