Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature
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Author(s)
Warnock, Shireen M.
Lemus, Allison
Joh, Jungwoo
Krishnan, Srikanth
Pendharkar, Sameer
del Alamo, Jesus A
Date Issued
July 2017
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Warnock, Shireen et al. "Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature." IEEE Transactions on Electron Devices 64, 8 (August 2018): 3132 - 3138 © 2017 IEEE
Version
Author's final manuscript
Abstract
We have investigated time-dependent dielectric breakdown in high-voltage AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors, with a focus specifically on the role of temperature under positive gate stress conditions. We aim toward understanding the temperature dependence of progressive breakdown (PBD) as well as hard breakdown. We find that the temperature dependence of time-to-first breakdown, hard breakdown, and the gate current evolution during PBD all share similar, shallow activation energies that suggest a common underlying mechanism. However, the gate current noise during PBD seems to be independent of temperature and is likely due to a tunneling process. Understanding of temperature-dependent breakdown is essential to developing accurate device lifetime estimates.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Lincoln Laboratory
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1109/ted.2017.2717924
