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Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus
Name
Advanced Photonics Research - 2021 - Jo - Photonic Platforms Using In‐Plane Optical Anisotropy of Tin II Selenide and.pdf
Description
Published version
Size
2.4 MB
Format
Adobe PDF
Checksum (MD5)
21b878482db53a9e155e451be4b39650
Author(s)
Jo, Seong Soon
Wu, Changming
Zhu, Linghan
Yang, Li
Li, Mo
Jaramillo, Rafael
Date Issued
2021
Journal
Advanced Photonics Research
Publisher
Wiley
Citation
Jo, Seong Soon, Wu, Changming, Zhu, Linghan, Yang, Li, Li, Mo et al. 2021. "Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus." Advanced Photonics Research, 2 (12).
Version
Final published version
Abstract
Among layered and 2D semiconductors, there are many with substantial opticalanisotropy within individual layers, including group-IV monochalcogenidesMX(M¼Ge or Sn andX¼S or Se) and black phosphorous (bP). Recent work hassuggested that the in-plane crystal orientation in such materials can be switched(e.g., rotated through 90 ) through an ultrafast, displacive (i.e., nondiffusive),nonthermal, and lower-power mechanism by strong electricfields, due toin-plane dielectric anisotropy. In theory, this represents a new mechanism forlight-controlling-light in photonic integrated circuits (PICs). Herein, numericaldevice modeling is used to study device concepts based on switching the crystalorientation of SnSe and bP in PICs. Ring resonators and 1 2 switches withresonant conditions that change with the in-plane crystal orientations SnSe andbP are simulated. The results are broadly applicable to 2D materials with fer-roelectric and ferroelastic crystal structures including SnO, GeS, and GeSe.RESEARCH ARTICLEwww.adpr-journal.comAdv. Photonics Res.2021,2, 21001762100176 (1 of 6)© 2021 The Authors. Advanced Photonics Research published by Wiley-VCH GmbH
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Creative Commons Attribution 4.0 International license
Persistent DSpace Link
DOI of Published Version
10.1002/ADPR.202100176
