Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays
Name
1.5049137.pdf
Description
Published version
Size
5.84 MB
Format
Adobe PDF
Checksum (MD5)
6a01bfe1d972180e7217a0e61895f1a1
Author(s)
Tan, Scott H. (Scott Howard)
Lin, Peng
Yeon, Hanwool
Choi, Shinhyun
Park, Yongmo
Kim, Jeehwan
Date Issued
December 2018
Journal
APL Materials
Publisher
AIP Publishing
Citation
Tan, Scott H. et al., "Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays." APL Materials 6, 12 (December 2018): 120901 ©2018 Author(s)
Version
Final published version
Abstract
Resistive random-Access memories are promising analog synaptic devices for efficient bio-inspired neuromorphic computing arrays. Here we first describe working principles for phase-change random-Access memory, oxide random-Access memory, and conductive-bridging random-Access memory for artificial synapses. These devices could allow for dense and efficient storage of analog synapse connections between CMOS neuron circuits. We also discuss challenges and opportunities for analog synaptic devices toward the goal of realizing passive neuromorphic computing arrays. Finally, we focus on reducing spatial and temporal variations, which is critical to experimentally realize powerful and efficient neuromorphic computing systems.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution 4.0 International license
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1063/1.5049137
