Converting normal insulators into topological insulators via tuning orbital levels
Name
PhysRevB.92.205118.pdf
Size
1.15 MB
Format
Adobe PDF
Checksum (MD5)
09514751c2941d7a45b78880c6bcb0e7
Author(s)
Shi, Wu-Jun
Liu, Junwei
Xu, Yong
Xiong, Shi-Jie
Wu, Jian
Duan, Wenhui
Date Issued
November 2015
Journal
Physical Review B
Publisher
American Physical Society
Citation
Shi, Wu-Jun, Junwei Liu, Yong Xu, Shi-Jie Xiong, Jian Wu, and Wenhui Duan. “Converting Normal Insulators into Topological Insulators via Tuning Orbital Levels.” Physical Review B 92, no. 20 (November 2015). © 2015 American Physical Society
Version
Final published version
Abstract
Tuning the spin-orbit coupling strength via foreign element doping and modifying bonding strength via strain engineering are the major routes to convert normal insulators to topological insulators. We here propose an alternative strategy to realize topological phase transition by tuning the orbital level. Following this strategy, our first-principles calculations demonstrate that a topological phase transition in the cubic perovskite-type compounds CsGeBr[subscript 3] and CsSnBr[subscript 3] could be facilitated by carbon substitutional doping. Such a unique topological phase transition predominantly results from the lower orbital energy of the carbon dopant, which can pull down the conduction bands and even induce band inversion. Beyond conventional approaches, our finding of tuning the orbital level may greatly expand the range of topologically nontrivial materials.
MIT Department
Massachusetts Institute of Technology. Materials Processing Center
Massachusetts Institute of Technology. Department of Physics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1103/PhysRevB.92.205118
