High-speed modulation of resonant CMOS photonic modulators in deep-submicron bulk-CMOS
Name
593760394-MIT.pdf
Description
Full printable version
Size
8.81 MB
Format
Adobe PDF
Checksum (MD5)
5062ce601c47192e06d0136b4545c34b
Author(s)
Moss, Benjamin (Benjamin Roy)
Advisor(s)
Vladimir Stojanović.
Date Issued
2009
Publisher
Massachusetts Institute of Technology
Abstract
Processor manufacturers have turned to parallelism to continue to improve processor performance, and the bandwidth demands of these systems have risen. Silicon photonics can lower the energy-per-bit of core-to-core and core-to-memory interconnects to help alleviate bandwidth bottlenecks. In this thesis, methods of controlling the amount of charge entering the PiN-diode structure of a photonic ring modulator are investigated to achieve high energy-efficiency in a constrained monolithic process. A digital modulator driver circuit is designed, simulated, fabricated and partially tested. This circuit uses a push-pull topology with pre emphasis to reduce the energy per bit and to prevent the ring's optical passband from shifting to the next optical channel. A flexible driver test circuit for in-situ device characterization has been developed with a device-to-circuit modeling framework. There are many tradeoffs that must be analyzed from the system, circuit, and device levels.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 71-72).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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