Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process
Name
FINAL VERSION.pdf
Size
1.62 MB
Format
Adobe PDF
Checksum (MD5)
83ae28c8ee4b1fb73744fea5645c2935
Author(s)
Shih, Pao-Chuan
Rughoobur, Girish
Cheng, Kai
Akinwande, Akintunde I.
Palacios, Tomas
Date Issued
March 2021
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Shih, Pao-Chuan, Rughoobur, Girish, Cheng, Kai, Akinwande, Akintunde I. and Palacios, Tomas. 2021. "Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process." IEEE Electron Device Letters, 42 (3).
Version
Author's final manuscript
Subjects
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1109/led.2021.3052715
