Si[subscript C]C[subscript Si] antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching
Name
Gerstmann-2010-SiCCSi antisite pair.pdf
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Author(s)
Ceresoli, Davide
Gerstmann, Uwe
Seitsonen, A. P.
Mauri, Francesco
von Bardeleben, H. J.
Cantin, J. L.
Garcia Lopez, J.
Alternative Title
SiCCSi antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching
Date Issued
May 2010
Journal
Physical Review B
Publisher
American Physical Society
Citation
Gerstmann, U. et al. “Si[subscript C]C[subscript Si] antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching.” Physical Review B 81.19 (2010): 195208. © 2010 The American Physical Society.
Version
Final published version
Abstract
The nearest-neighbor antisite pair defects in 4H-SiC, 6H-SiC, and 3C-SiC single crystals have been identified using electron paramagnetic resonance spectroscopy in combination with a nonperturbative ab initio scheme for the electronic g tensor. Based on the theoretical predictions, the positively charged defect has been found experimentally also in the cubic 3C-SiC polytype where it is characterized by spin 1/2 and highly anisotropic g values of g[subscript xx]=2.0030, g[subscript yy]=2.0241, and g[subscript zz]=2.0390 within C1[subscript h] symmetry. The exceptional large g values are explained by details of the spin-orbit coupling causing a strongly anisotropic quenching of the orbital angular momentum of the p-like unpaired electron.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.81.195208
