Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress
Author(s)
Wu, Yufei
Sasangka, Wardhana A.
del Alamo, Jesus A
Date Issued
October 2017
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Wu, Yufei et al. "Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress." IEEE Transactions on Electron Devices 64, 11 (November 2017): 4435 - 4441 © 2017 IEEE
Version
Author's final manuscript
Abstract
The electrical degradation of InAlN/GaN high-electron-mobility transistors for millimeter-wave applications has been examined under simultaneous high V [subscript DS,stress] and high I[subscript Dstress] electrical stress. Besides a drain current decrease and a positive threshold voltage shift, the creation of an anomalous source-side gate leakage path has been identified. We attribute this to high electric-field induced trap generation in the AlN layer directly under the gate edge on the source side. The resulting increase in gate leakage further exacerbates the degradation of the gate diode. In addition, we postulate that high-power stress leads to significant device self-heating that causes gate sinking and leads to a permanent positive threshold voltage shift and drain current degradation.
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Singapore-MIT Alliance in Research and Technology (SMART)
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/ted.2017.2754248
