D band Raman intensity calculation in armchair edged graphene nanoribbons
Name
Barros-2011-D band Raman intensi.pdf
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456.83 KB
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Checksum (MD5)
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Author(s)
Barros, Eduardo B.
Sato, K.
Samsonidze, Ge. G.
Souza Filho, A. G.
Dresselhaus, Mildred
Saito, R.
Date Issued
June 2011
Journal
Physical Review B
Publisher
American Physical Society
Citation
Barros, E. et al. “D Band Raman Intensity Calculation in Armchair Edged Graphene Nanoribbons.” Physical Review B 83.24 (2011).©2011 American Physical Society.
Version
Final published version
Abstract
The D band Raman intensity is calculated for armchair edged graphene nanoribbons using an extended tight-binding method in which the effect of interactions up to the seventh nearest neighbor is taken into account. The possibility of a double resonance Raman process with multiple scattering events is considered by calculating a T matrix through a direct diagonalization of the nanoribbon Hamiltonian. We show that long-range interactions play an important role in the evaluation of both the D band intensity and that the main effect of multiple scattering events on the calculated D band is an overall increase in intensity by a factor of 4. The D band intensity is shown to be independent of the nanoribbon widths for widths larger than 17 nm, leading to the well-known linear dependence of the ID/IG ratio on the inverse of the crystalline size. The D band intensity was shown to be nearly independent of the laser excitation energy and to have a maximum value for incident and scattering photons polarized along the direction of the edge.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.83.245435
